Silicon-doped $\beta$-Ga${}_2$O${}_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga${}_2$O${}_3$ at a growth rate of ~1 $\mu$m/h with control of the silicon doping concentration from 5x10${}^{16}$…