P. Vogt

Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for…

cond-mat.mtrl-sci2023★ 20 cited

Growth, catalysis and faceting of $α$ -Ga $_{2}$ O $_{3}$ and $α$ -(In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ on $m$ -plane $α$ -Al $_{2}$ O $_{3}$ by molecular beam epitaxy

Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter +7

The growth of $α$ -Ga $_{2}$ O $_{3}$ and $α$ -(In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ on $m$ -plane $α$ -Al $_{2}$ O $_{3}$ (10 $1 ˉ$ 0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCA…

cond-mat.mtrl-sci2023★ 15 cited

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

J. P. McCandless, D. Rowe, N. Pieczulewski +8

We report the growth of $α - G a_{2} O_{3}$ on $m$ -plane $A l_{2} O_{3}$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…

Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films

Growth, catalysis and faceting of α-Ga2​O3​ and α-(Inx​Ga1−x​)2​O3​ on m-plane α-Al2​O3​ by molecular beam epitaxy

Growth of α−Ga2​O3​ on Al2​O3​ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Growth, catalysis and faceting of $α$ -Ga $_{2}$ O $_{3}$ and $α$ -(In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ on $m$ -plane $α$ -Al $_{2}$ O $_{3}$ by molecular beam epitaxy

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy