P. Vogt

collaborators

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cond-mat.mtrl-sci2022

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$ -Ga $_{2}$ O $_{3}$ at a growth rate of ~1 $μ$ m/h with control of the silicon doping concentration from 5x10 $^{16}$ …

cond-mat.mtrl-sci2020

Influence of Polymorphism on the Electronic Structure of Ga $_{2}$ O $_{3}$

Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga $_{2}$ O $_{3}$ has emerged as an altern…

cond-mat.mtrl-sci2016

2D vibrational properties of epitaxial silicene on Ag(111) probed by in situ Raman Spectroscopy

Dmytro Solonenko, Ovidiu D. Gordan, Guy Le Lay +2

The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synt…

Silicon-doped β-Ga2​O3​ films grown at 1 μm/h by suboxide molecular-beam epitaxy

Influence of Polymorphism on the Electronic Structure of Ga2​O3​

2D vibrational properties of epitaxial silicene on Ag(111) probed by in situ Raman Spectroscopy

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy

Influence of Polymorphism on the Electronic Structure of Ga $_{2}$ O $_{3}$