80 citations · 192 across the 7 of their papers we have counts for
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Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…
Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +7
We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy (-MBE). By supplying the molecular catalysts InO and SnO we…
Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +15
This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per…
Influence of Polymorphism on the Electronic Structure of GaO
Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. GaO has emerged as an altern…
2D vibrational properties of epitaxial silicene on Ag(111) probed by in situ Raman Spectroscopy
Dmytro Solonenko, Ovidiu D. Gordan, Guy Le Lay +2
The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synt…