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20142024
most citedA physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

41 citations · 144 across the 7 of their papers we have counts for

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cond-mat.mes-hall2017

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

M. Musolino, F. Sacconi, A. Tahraoui +5

In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relativ…