2 papers
physics.app-ph2019
Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
David van Treeck, Johannes Ledig, Gregor Scholz +7
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting dio…
cond-mat.mtrl-sci2016
Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
U. Jahn, M. Musolino, J. Lähnemann +8
Several ten m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN…