40 citations · 81 across the 6 of their papers we have counts for
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High-frequency rectification in graphene lateral p-n junctions
Yu. B. Vasilyev, G. Yu. Vasileva, S. Novikov +3
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultrav…
Strongly temperature dependent resistance of meander-patterned graphene
G. Yu. Vasileva, D. Smirnov, Yu. B. Vasilyev +5
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. T…
Influence of disordered edges on transport properties in graphene
D. Smirnov, G. Yu. Vasileva, J. C. Rode +4
The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed fo…
Linear magnetoresistance in compensated graphene bilayer
G. Yu. Vasileva, D. Smirnov, Yu. L. Ivanov +8
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears…
Magnetoresistance of monolayer graphene with short-range scattering
G. Yu. Vasileva, P. S. Alekseev, Yu. B. Vasilyev +4
We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior…
Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well
J. Ludwig, Yu. B. Vasilyev, N. N. Mikhailov +4
We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to =16T…