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20092023
most citedGraphene field effect transistors as room-temperature Terahertz detectors

1.1k citations · 3.8k across the 38 of their papers we have counts for

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14 papers · 1 filter

cond-mat.mes-hall2022★ 22 cited

Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

M. Asgari, L. Viti, O. Balci +12

The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves…

cond-mat.mes-hall2021★ 36 cited

Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies

Mahdi Asgari, Dominique Coquillat, Guido Menichetti +6

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor th…

cond-mat.mes-hall2019★ 242 cited

Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction

Sebastián Castilla, Bernat Terrés, Marta Autore +11

Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of se…

cond-mat.mes-hall2019★ 97 cited

Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes

Leonardo Viti, Antonio Politano, Kai Zhang +1

Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors c…

cond-mat.mes-hall2018★ 104 cited

Plasmonics with two-dimensional semiconductors "beyond graphene": from basic research to technological applications

Amit Agarwal, Miriam S. Vitiello, Leonardo Viti +2

In this minireview, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors h…

cond-mat.mes-hall2018★ 20 cited

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

A. Kadykov, F. Teppe, C. Consejo +12

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transi…