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researcher

G. Shine

1 paper hereh-index 7676 citations12 works total

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

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  • cond-mat.mes-hall1

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most citedImproved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

548 citations · 548 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2016★ 548 cited

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Chris D. English, Gautam Shine, Vincent E. Dorgan +2

The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts wit…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.