Optical characterization of deep level defects in n-type Al${}_x$In${}_y$Ga${}_{1-x-y}$P for development of solid-state photomultiplier analogs

Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…