E. Shaner

collaborators

2 papers

physics.app-ph2025

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs

Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…

cond-mat.mes-hall2024

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Mayer M. Feldman, Gordian Fuchs, Tiffany Liu +4

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electr…

Optical characterization of deep level defects in n-type Alx​Iny​Ga1−x−y​P for development of solid-state photomultiplier analogs

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs