180 citations · 480 across the 9 of their papers we have counts for
Showing 2016 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2016
A multilevel nonvolatile magnetoelectric memory based on memtranstor
Jianxin Shen, Junzhuang Cong, Dashan Shang +4
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices.…
cond-mat.mtrl-sci2016★ 74 cited
A non-volatile memory based on nonlinear magnetoelectric effects
Jianxin Shen, Junzhuang Cong, Yisheng Chai +5
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type o…