288 citations · 386 across the 7 of their papers we have counts for
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cond-mat.mes-hall2017★ 52 cited
Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
Shuigang Xu, Junying Shen, Gen Long +17
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…
cond-mat.mes-hall2016★ 21 cited
Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport
Gen Long, Shuigang Xu, Junying Shen +8
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induce…
cond-mat.mes-hall2015★ 288 cited
Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
Gen Long, Denis Maryenko, Junying Shen +9
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature h…