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20142023
most citedQuantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

288 citations · 831 across the 17 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2022★ 1 cited

Giant magnetic anisotropy in the atomically thin van der Waals antiferromagnet FePS3

Youjin Lee, Suhan Son, Chaebin Kim +13

Van der Waals (vdW) magnets are an ideal platform for tailoring two-dimensional (2D) magnetism with immense potential for spintronics applications and are intensively investigated.…

cond-mat.mes-hall2017★ 121 cited

Isolation and Characterization of Few-layer Manganese Thiophosphite

Gen Long, Ting Zhang, Xiangbin Cai +12

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS that couples the valley degree of freedom to a macroscopic antiferromagnetic order. Th…

cond-mat.mes-hall2017★ 52 cited

Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

Shuigang Xu, Junying Shen, Gen Long +17

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…

cond-mat.mes-hall2016★ 21 cited

Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

Gen Long, Shuigang Xu, Junying Shen +8

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induce…

cond-mat.mes-hall2015★ 288 cited

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

Gen Long, Denis Maryenko, Junying Shen +9

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature h…