106 citations · 111 across the 11 of their papers we have counts for
6 papers · 1 filter
Constructing 100 MΩ and 1 GΩ Resistance Standards via Star-Mesh Transformations
Dean G. Jarrett, Albert F. Rigosi, Dominick S. Scaletta +7
A recent mathematical framework for optimizing resistor networks to achieve values in the MΩ through GΩ levels was employed for two specific cases. Objectives here include proof of…
Fractal-like star-mesh transformations using graphene quantum Hall arrays
Dominick S. Scaletta, Swapnil M. Mhatre, Ngoc Thanh Mai Tran +10
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall arr…
Star-Mesh Quantized Hall Array Resistance Devices
Dean G. Jarrett, Ching-Chen Yeh, Shamith U. Payagala +10
Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-b…
Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf +13
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-ter…
Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
E. J. Fox, I. T. Rosen, Yanfei Yang +6
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge sta…
Low Carrier Density Epitaxial Graphene Devices On SiC
Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama +6
Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean d…