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Intricate modulation of interlayer coupling at GO/MoSe2 interface: application in time-dependent optics and device transport
Tuhin Kumar Maji, Kumar Vaibhav, Samir Kumar Pal +3
In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the doping dynamics by modulating interlayer coupling through the combination of strain-reducing…
Self-Powered, Highly Sensitive, High Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction
Krishna Murali, Kausik Majumdar
Two dimensional transition metal di-chalcogenides (TMDCs) are promising candidates for ultra-low intensity photodetection. However, the performance of these photodetectors is usual…
Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction
Mehak Mahajan, Krishna Murali, Nikhil Kawatra +1
1T-TaS2 is a layered material that exhibits charge density wave (CDW) induced distinct electrical resistivity phases and has attracted a lot of attention for interesting device app…
Gate tunable WSe2/SnSe2 backward diode with ultrahigh reverse rectification ratio
Krishna Murali, Medha Dandu, Sarthak Das +1
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high frequency response, temperature stability, radiation hardness, and 1/…