29 citations · 62 across the 6 of their papers we have counts for
5 papers · 1 filter
Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
Tillmann Krauss, Frank Wessely, Udo Schwalke
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor…
Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS
Tillmann Krauss, Frank Wessely, Udo Schwalke
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on…
Transfer-free Grown Bilayer Graphene Transistors for Digital Applications
Pia Juliane Wessely, Frank Wessely, Emrah Birinci +2
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor depositio…
Transfer-free fabrication of graphene transistors
Pia Juliane Wessely, Frank Wessely, Emrah Birinci +2
We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidiz…
Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio
Pia Juliane Wessely, Frank Wessely, Emrah Birinci +3
By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized…