29 citations · 62 across the 6 of their papers we have counts for
6 papers
Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
Tillmann Krauss, Frank Wessely, Udo Schwalke
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor…
Dual Metal-Gate Planar Field-Effect Transistor for Electrostatically Doped CMOS Design
Tillmann Krauss, Frank Wessely, Udo Schwalke
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The…
Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS
Tillmann Krauss, Frank Wessely, Udo Schwalke
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on…
Transfer-free Grown Bilayer Graphene Transistors for Digital Applications
Pia Juliane Wessely, Frank Wessely, Emrah Birinci +2
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor depositio…
Transfer-free fabrication of graphene transistors
Pia Juliane Wessely, Frank Wessely, Emrah Birinci +2
We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidiz…
Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio
Pia Juliane Wessely, Frank Wessely, Emrah Birinci +3
By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized…