113 citations · 246 across the 13 of their papers we have counts for
14 papers
On-chip pulse generation at 8 μm wavelength
Annabelle Bricout, Mathieu Bertrand, Philipp Täschler +15
The mid-infrared spectral region holds growing importance for applications such as gas sensing and spectroscopy. Although compact ultrashort pulse laser sources are essential to en…
Germanium-Based Mid-Infrared Photonics
Delphine Marris-Morini, Goran Z. Mashanovich, Milos Nedeljkovic +4
The mid-infrared (mid-IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Ge-based photonic inte…
Tunable on-chip electro-optic frequency-comb generation at 8 μm wavelength
Victor Turpaud, Thi-Hao-Nhi Nguyen, Natnicha Koompai +9
Dual-comb spectroscopy is a powerful technique to measure optical spectra in a wide spectral range with high-frequency resolution. The development of compact systems operating in t…
Second harmonic generation in germanium quantum wells for nonlinear silicon photonics
Jacopo Frigerio, Chiara Ciano, Joel Kuttruff +12
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Nat…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Optical modulation in Ge-rich SiGe waveguides in the mid-IR wavelength range up to 11 um
Miguel Montesinos-Ballester, Vladyslav Vakarin, Joan Manel Ramirez +11
Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous det…
Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits
Andrea Hofmann, Daniel Jirovec, Maxim Borovkov +6
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet () qubits. We demonstrate a large range of tunability, from two sin…
Strain analysis of Ge micro disk using precession electron diffraction
Aneeqa Bashir, Ross. W. Millar, Kevin Gallacher +7
The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution…
Magnetotransport in BiSe thin films epitaxially grown on Ge(111)
T. Guillet, A. Marty, C. Beigné +6
Topological insulators (TIs) like BiSe are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defe…
Mid Infrared Nonlinear Plasmonics using Germanium Nanoantennas on Silicon Substrates
Marco P. Fischer, Aaron Riede, Kevin Gallacher +8
We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement,…
Optical Activation of Germanium Plasmonic Antennas in the Mid Infrared
Marco P. Fischer, Christian Schmidt, Emilie Sakat +9
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct…
Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
Jacopo Frigerio, Andrea Ballabio, Giovanni Isella +16
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tu…
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates
E. Vitiello, M. Virgilio, A. Giorgioni +7
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to…
Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers
Leonetta Baldassarre, Eugenio Calandrini, Antonio Samarelli +8
The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vib…