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20152026
most citedMonocrystalline free standing 3D yttrium iron garnet magnon nano resonators

78 citations · 120 across the 9 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2020★ 27 cited

Integration and characterization of micron-sized YIG structures with very low Gilbert damping on arbitrary substrates

P. Trempler, R. Dreyer, P. Geyer +3

We present a novel process that allows the transfer of monocrystalline yttrium-iron-garnet microstructures onto virtually any kind of substrate. The process is based on a recently…

cond-mat.mes-hall2019★ 6 cited

Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure

A. Müller, C. Şahin, M. Z. Minhas +2

We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an electron gas. Charge is injected by tunneling from t…

cond-mat.mes-hall2018★ 78 cited

Monocrystalline free standing 3D yttrium iron garnet magnon nano resonators

F. Heyroth, C. Hauser, P. Trempler +6

Nano resonators in which mechanical vibrations and spin waves can be coupled are an intriguing concept that can be used in quantum information processing to transfer information be…

cond-mat.mes-hall2016

Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures

M. Z. Minhas, A. Müller, F. Heyroth +2

The resistance of the electron gas at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves duri…

cond-mat.mes-hall2015

Sidewall depletion in nano-patterned LAO/STO heterostructures

M. Z. Minhas, H. H. Blaschek, F. Heyroth +1

We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO/ SrTiO (LAO/STO) interface. The process uses electro…

cond-mat.mes-hall2015★ 9 cited

Nanosized Vertical Organic Spin-Valves

R. Göckeritz, N. Homonnay, A. Müller +3

A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexib…