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20112026
most citedOptical spin injection and spin lifetime in Ge heterostructures

103 citations · 183 across the 10 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2026

Unoccupied spin texture of ordered Bi films on vicinal Ge substrates

F. Goto, G. Bussetti, L. Nicolaï +8

Vicinal surfaces offer a compelling testing ground in surface science: breaking the high symmetry of a singular surface introduces periodic step arrays that can modify surface stat…

cond-mat.mtrl-sci2025

Optically induced orbital polarization in bulk germanium

Francesco Scali, Marco Finazzi, Federico Bottegoni +1

Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of…

cond-mat.mtrl-sci2021★ 6 cited

Electric Field Modulation of Spin Transport

Carlo Zucchetti, Adele Marchionni, Monica Bollani +3

The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this…

cond-mat.mtrl-sci2018★ 1 cited

Direct observation of intravalley spin relaxation in single-layer WS

Z. Wang, A. Molina-Sanchez, P. Altmann +12

In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-o…

cond-mat.mtrl-sci2016★ 25 cited

Non-local opto-electrical spin injection and detection in germanium at room temperature

Fabien Rortais, Carlo Zucchetti, Lavinia Ghirardini +13

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external s…

cond-mat.mtrl-sci2015★ 4 cited

Valley and spin dynamics in monolayer MoS

S. Dal Conte, F. Bottegoni, E. A. A. Pogna +10

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-e…

cond-mat.mtrl-sci2011★ 103 cited

Optical spin injection and spin lifetime in Ge heterostructures

F. Pezzoli, F. Bottegoni, D. Trivedi +9

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allow…