103 citations · 183 across the 10 of their papers we have counts for
10 papers
Optically induced orbital polarization in bulk germanium
Francesco Scali, Marco Finazzi, Federico Bottegoni +1
Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of…
Electric Field Modulation of Spin Transport
Carlo Zucchetti, Adele Marchionni, Monica Bollani +3
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this…
Spin-orbitronics at a topological insulator-semiconductor interface
T. Guillet, C. Zucchetti, A. Marchionni +9
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform a…
Direct observation of intravalley spin relaxation in single-layer WS
Z. Wang, A. Molina-Sanchez, P. Altmann +12
In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-o…
Enhancement of Spin Currents in a Lattice near the Curie Point
Marco Finazzi, Federico Bottegoni, Carlo Zucchetti +2
We show that pure spin currents carried by conduction electrons injected into a paramagnetic lattice of mutually interacting localized magnetic moments can be enhanced close to the…
Non-local opto-electrical spin injection and detection in germanium at room temperature
Fabien Rortais, Carlo Zucchetti, Lavinia Ghirardini +13
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external s…
Valley and spin dynamics in monolayer MoS
S. Dal Conte, F. Bottegoni, E. A. A. Pogna +10
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-e…
Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature
Federico Bottegoni, Alberto Ferrari, Stefano Cecchi +3
We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap o…
Optical spin injection and spin lifetime in Ge heterostructures
F. Pezzoli, F. Bottegoni, D. Trivedi +9
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allow…
Spin-Orbit Engineering of Semiconductor Heterostructures
Federico Bottegoni, Henri-Jean Drouhin, Guy Fishman +1
We present a systematic construction of the probability-current operator,based on a momentum power expansion of effective Hamiltonians. The result is valid in the presence of a Ras…