39 citations · 116 across the 10 of their papers we have counts for
7 papers · 1 filter
Noise Correlations in a 1D Silicon Spin Qubit Array
M. B. Donnelly, J. Rowlands, L. Kranz +9
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors.…
Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
Radha Krishnan, Beng Yee Gan, Yu-Ling Hsueh +6
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on…
Spin-valley locking for in-gap quantum dots in a MoS2 transistor
Radha Krishnan, Sangram Biswas, Yu-Ling Hsueh +3
Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lat…
Spin-photon coupling for atomic qubit devices in silicon
Edyta N. Osika, Sacha Kocsis, Yu-Ling Hsueh +6
Electrically addressing spin systems is predicted to be a key component in developing scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manip…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…
Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
J. A. Mol, J. Salfi, R. Rahman +5
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at c…
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan +5
An atomistic method of calculating the spin-lattice relaxation times () is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes int…