201 citations · 695 across the 24 of their papers we have counts for
14 papers · 1 filter
Photoresist-Free Lithography via Light-Induced Redox Patterning of Oxide Thin Films
Johannes Frantti, Yukari Fujioka, Christopher Rouleau +2
Lithographic patterning of nanoscale devices typically depends on photoresists, wet processing and multistep pattern-transfer workflows that impose both environmental and scaling c…
Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Sumner B. Harris, Arpan Biswas, Seok Joon Yun +5
Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and seren…
Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe
Weijun Luo, Alexander Puretzky, Benjamin Lawrie +7
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum em…
Phonon modes and Raman signatures of MnBi2nTe3n+1 (n=1,2,3,4) magnetic topological heterostructures
Yujin Cho, Jin Ho Kang, Liangbo Liang +8
An intrinsic antiferromagnetic topological insulator can be realized by intercalating Mn-Te bilayer chain in a topological insulator, . $\m…
Room-temperature insulating ferromagnetic (Ni,Co)1+2xTi1-xO3 thin films
Yukari Fujioka, Johannes Frantti, Christopher Rouleau +6
Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferrom…
In Quest of a Ferromagnetic Insulator -- Structure Controlled Magnetism in Mg-Ti-O Thin Films
Johannes Frantti, Yukari Fujioka, Christopher Rouleau +5
Ferromagnetic insulator thin films can convey information by spin waves, avoiding charge displacement and Eddy current losses. The sparsity of high-temperature insulating ferromagn…
High-temperature magnetostructural transition in van der Waals-layered a-MoCl3
Michael A. McGuire, Jiaqiang Yan, Paula Lampen-Kelley +9
The crystallographic and magnetic properties of the cleavable 4d3 transition metal compound a-MoCl3 are reported, with a focus on the behavior above room temperature. Crystals were…
Room-Temperature Electron-Hole Liquid in Monolayer MoS2
Yiling Yu, Alexander Bataller, Robert Younts +6
Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), a…
Nickel-cobalt-titanate thin films - new sustainable magnetic oxides
Yukari Fujioka, Johannes Frantti, Christopher Rouleau +2
Single phase nickel-cobalt-titanate thin films with a formula A1+2xTi1-xO3, where A is Ni2+,Co2+ and -0.25<x<1, were grown by pulsed laser deposition on sapphire substrates. There…
Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
Xi Ling, Liangbo Liang, Shengxi Huang +6
As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principle…
Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal
J. Frantti, Y. Fujioka, A. Puretzky +4
A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that…
A statistical model approximation for perovskite solid-solutions: a Raman study of lead-zirconate-titanate single crystal
J. Frantti, Y. Fujioka, A. Puretzky +3
Lead titanate (PbTiO3) is a classical example of a ferroelectric perovskite oxide illustrating a displacive phase transition accompanied by a softening of a symmetry-breaking mode.…
Investigation of Gd3N@C2n (40 < n < 44) family by Raman and inelastic electron tunneling spectroscopy
Brian G. Burke, Jack Chan, Keith A. Williams +7
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and univ…
Raman study of Fano interference in p-type doped silicon
Brian G. Burke, Jack Chan, Keith A. Williams +3
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The ef…