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Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure
Antonio Rossi, Jonas Zipfel, Indrajit Maity +13
Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from…
Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect
Zuocheng Zhang, Xiao Feng, Jing Wang +11
The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications…
Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
Zuocheng Zhang, Likai Li, Jason Horng +10
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material.…
Direct Observation of Layer-Dependent Electronic Structure in Phosphorene
Likai Li, Jonghwan Kim, Chenhao Jin +14
Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new twodimensional (2D) material that holds promise for electronic and photonic technology. Here w…
Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas
Likai Li, Fangyuan Yang, Guo Jun Ye +10
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enri…
Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films
Jinsong Zhang, Xiao Feng, Yong Xu +14
We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coeffi…
Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators
Cui-Zu Chang, Zuocheng Zhang, Kang Li +11
It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to sim…
Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
Cui-Zu Chang, Peizhe Tang, Yi-Lin Wang +11
With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topolo…
Electrically tuned magnetic order and magnetoresistance in a topological insulator
Zuocheng Zhang, Xiao Feng, Minghua Guo +10
The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into T…
Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator
Cui-Zu Chang, Jin-Song Zhang, Min-Hao Liu +13
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Exp…
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Jinsong Zhang, Cui-Zu Chang, Zuocheng Zhang +10
Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. Th…
Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
Minhao Liu Jinsong Zhang, Cui-Zu Chang, Zuocheng Zhang +10
Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimension…
Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
Minhao Liu, Cui-Zu Chang, Zuocheng Zhang +10
We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low tempe…