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cond-mat.mtrl-sci2005
Thermomodulation studies of heat transport in heavy-doped n-GaAs by using the temperature dependence of metal-semiconductor contact resistance
A. Ya. Shul'man, N. A. Mordovets, I. N. Kotel'nikov
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser r…
cond-mat.mtrl-sci2000
Pressure Dependence of the Barrier Height in Tunnel n-GaAs/Au Junctions
E. M. Dizhur, A. N. Voronovsky, A. Ya. Shul'man +1
The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-bar…