4 papers
Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs
S. E. Dizhur, I. N. Kotel'nikov, E. M. Dizhur
Al--GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the…
2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures
S. E. Dizhur, I. N. Kotel'nikov, V. A. Kokin +1
2DEG states of Al/-GaAs structures were investigated in the persistent tunneling photoconductivity (PTPC) regime at low temperatures. "Thickening" of the unoccupied subbands to…
Thermomodulation studies of heat transport in heavy-doped n-GaAs by using the temperature dependence of metal-semiconductor contact resistance
A. Ya. Shul'man, N. A. Mordovets, I. N. Kotel'nikov
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser r…
Pressure Dependence of the Barrier Height in Tunnel n-GaAs/Au Junctions
E. M. Dizhur, A. N. Voronovsky, A. Ya. Shul'man +1
The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-bar…