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20112023
most citedSingle Photon Emission from Single Perovskite Nanocrystals of Cesium Lead Bromide

376 citations · 1.2k across the 19 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2019★ 53 cited

Quantum Interference in a Single Perovskite Nanocrystal

Yan Lv, Chunyang Yin, Chunfeng Zhang +4

Coherent manipulation of the exciton wave function in a single semiconductor colloidal nanocrystal (NC) has been actively pursued in the past decades without any success, mainly du…

cond-mat.mes-hall2016★ 173 cited

Bright-exciton fine structures splittings in single perovskite nanocrystals

Chunyang Yin, Liyang Chen, Yan Lv +7

Although both epitaxial quantum dots (QDs) and colloidal nanocrystals (NCs) are quantum-confined semiconductor nanostructures, so far they have demonstrated dramatically-different…

cond-mat.mes-hall2016★ 273 cited

Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit

Yuhan Zhang, Jingsi Qiao, Si Gao +14

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the…

cond-mat.mes-hall2015★ 2 cited

Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu, S. W. Liu, M. Xiao +1

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) mea…

cond-mat.mes-hall2015

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

J. F. Xu, S. W. Liu, M. Xiao +1

GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 °C. The thin films were investigated using phot…

cond-mat.mes-hall2013★ 6 cited

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Chentian Shi, Chunfeng Zhang, Fan Yang +6

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency dro…

cond-mat.mes-hall2013

Enhanced Hot-Carrier Luminescence in Multilayer Reduced Graphene Oxide Nanospheres

Qi Chen, Chunfeng Zhang, Fei Xue +7

We report a method to promote photoluminescence emission in graphene materials by enhancing carrier scattering instead of directly modifying band structure in multilayer reduced gr…

cond-mat.mes-hall2013★ 6 cited

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Fan Yang, Chunfeng Zhang, Chentian Shi +7

We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a…

cond-mat.mes-hall2011★ 19 cited

Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods

Bin Jiang, Chunfeng Zhang, Xiaoyong Wang +4

We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs.…