376 citations · 1.2k across the 19 of their papers we have counts for
9 papers · 1 filter
Quantum Interference in a Single Perovskite Nanocrystal
Yan Lv, Chunyang Yin, Chunfeng Zhang +4
Coherent manipulation of the exciton wave function in a single semiconductor colloidal nanocrystal (NC) has been actively pursued in the past decades without any success, mainly du…
Bright-exciton fine structures splittings in single perovskite nanocrystals
Chunyang Yin, Liyang Chen, Yan Lv +7
Although both epitaxial quantum dots (QDs) and colloidal nanocrystals (NCs) are quantum-confined semiconductor nanostructures, so far they have demonstrated dramatically-different…
Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit
Yuhan Zhang, Jingsi Qiao, Si Gao +14
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the…
Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, S. W. Liu, M. Xiao +1
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) mea…
Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy
J. F. Xu, S. W. Liu, M. Xiao +1
GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 °C. The thin films were investigated using phot…
Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods
Chentian Shi, Chunfeng Zhang, Fan Yang +6
Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency dro…
Enhanced Hot-Carrier Luminescence in Multilayer Reduced Graphene Oxide Nanospheres
Qi Chen, Chunfeng Zhang, Fei Xue +7
We report a method to promote photoluminescence emission in graphene materials by enhancing carrier scattering instead of directly modifying band structure in multilayer reduced gr…
Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells
Fan Yang, Chunfeng Zhang, Chentian Shi +7
We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a…
Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods
Bin Jiang, Chunfeng Zhang, Xiaoyong Wang +4
We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs.…