7 citations · 8 across the 4 of their papers we have counts for
7 papers · 1 filter
Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
Bin-Bin Xu, Gabriele G. de Boo, Brett C. Johnson +8
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challengi…
Isotopic enrichment of silicon by high fluence Si ion implantation
D. Holmes, B. C. Johnson, C. Chua +8
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is re…
Piezoresistance in defect-engineered silicon
H. Li, A. Thayil, C. T. K. Lew +5
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a functio…
Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
Mateusz T. Mądzik, Arne Laucht, Fay E. Hudson +6
Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced…
Coherent control of NV- centers in diamond in a quantum teaching lab
Vikas K. Sewani, Hyma H. Vallabhapurapu, Yang Yang +5
The room temperature compatibility of the negatively-charged nitrogen-vacancy (NV-) in diamond makes it the ideal quantum system for a university teaching lab. Here, we describe a…
Imaging domain reversal in an ultrathin van der Waals ferromagnet
David A. Broadway, Sam C. Scholten, Cheng Tan +12
The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. Howev…