activity
20122016
most citedNon-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers

631 citations · 2.6k across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2016★ 16 cited

Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots

M. Vidal, M. V. Durnev, L. Bouet +10

In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath…

cond-mat.mes-hall2015★ 12 cited

Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots

M. V. Durnev, M. Vidal, L. Bouet +11

We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitax…

cond-mat.mtrl-sci2015★ 87 cited

Exciton states in monolayer MoSe2: impact on interband transitions

G. Wang, I. C. Gerber, L. Bouet +7

We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence exc…

cond-mat.mtrl-sci2015★ 147 cited

Magneto-optics in transition metal diselenide monolayers

G. Wang, L. Bouet, M. M. Glazov +5

We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields up to 9T applied perpendicula…

cond-mat.mtrl-sci2014★ 64 cited

Exciton dynamics in WSe2 bilayers

G. Wang, X. Marie, L. Bouet +5

We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D…

cond-mat.mes-hall2014★ 16 cited

Charge tuning in [111] grown GaAs droplet quantum dots

L. Bouet, M. Vidal, T. Mano +10

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled c…