Charge tuning in [111] grown GaAs droplet quantum dots

Abstract

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

arXiv comment5 pages, 3 figures

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Cited by in corpus (6)

• Low-Noise GaAs Quantum Dots for Quantum Photonics
• Magneto-optics in transition metal diselenide monolayers
• Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter
• Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
• Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots
• Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field