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physics.app-ph2022★ 18 cited
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Abhijit Biswas, Mingfei Xu, Kai Fu +18
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…
physics.app-ph2017★ 53 cited
Non Volatile MoS Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric
Zhongyuan Lu, Claudy Serrao, Asif Islam Khan +6
We demonstrate non-volatile, n-type, back-gated, MoS transistors, placed directly on an epitaxial grown, single crystalline, PbZrTiO (PZT) ferroelectric…