activity
19982005
most citedEvidence for an Anisotropic State of Two-Dimensional Electrons in High Landau Levels

635 citations · 1.7k across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mes-hall2005★ 23 cited

Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

Y. -W. Tan, J. Zhu, H. L. Stormer +3

We determine the spin susceptibility in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band struc…

cond-mat.mtrl-sci2005★ 30 cited

Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor

E. A. Henriksen, S. Syed, Y. Ahmadian +5

We report on the temperature dependence of the mobility, , of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ra…

cond-mat.supr-con2005

Evolution of Coherence and Superconductivity in Electron-Doped Cuprates

M. M. Qazilbash, B. S. Dennis, C. A. Kendziora +3

The electron-doped cuprates were studied by electronic Raman spectroscopy across the entire region of the superconducting (SC) phase diagram. We determined that the magnitude of th…

cond-mat.mes-hall2004★ 117 cited

Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures

Y. -W. Tan, J. Zhu, H. L. Stormer +3

We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHa…

cond-mat.mtrl-sci2004★ 301 cited

Metric Tensor Formulation of Strain in Density-Functional Perturbation Theory

D. R. Hamann, Xifan Wu, Karin M. Rabe +1

The direct calculation of the elastic and piezoelectric tensors of solids can be accomplished by treating homogeneous strain within the framework of density-functional perturbation…

cond-mat.mes-hall2004★ 122 cited

2D Metal-Insulator transition as a percolation transition

S. Das Sarma, M. P. Lilly, E. H. Hwang +3

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transitio…