119 citations · 182 across the 6 of their papers we have counts for
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physics.comp-ph2016
Strain effect engineered in α-Al2O3/monolayer MoS2 interface by first principle calculations
Sheng Yu, Shunjie Ran, Hao Zhu +4
With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductor…
cond-mat.mes-hall2016★ 2 cited
Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors
Sheng Yu, Hao Zhu, Kwesi Eshun +4
In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principle comput…