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Single-spin qubits in isotopically enriched silicon at low magnetic field
R. Zhao, T. Tanttu, K. Y. Tan +13
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave…
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik +12
We analyze the electron spin relaxation rate of individual ion-implanted P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with…
Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
Tuomo Tanttu, Bas Hensen, Kok Wai Chan +9
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures in…
Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
C. H. Yang, K. W. Chan, R. Harper +12
The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semicond…
Fidelity benchmarks for two-qubit gates in silicon
W. Huang, C. H. Yang, K. W. Chan +10
Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum i…
Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy
K. W. Chan, W. Huang, C. H. Yang +8
Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large scale quantum computer implementations. Noise coupled fro…