Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe${}_2$ Tunnel Field-Effect Transistors

Gaurav Pande, Jyun-Yan Siao, Wei-Liang Chen +7

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are…