440 citations · 699 across the 14 of their papers we have counts for
13 papers
Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe Tunnel Field-Effect Transistors
Gaurav Pande, Jyun-Yan Siao, Wei-Liang Chen +7
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are…
Electron-Electron Interactions in 2D Semiconductor InSe
Arvind Shankar Kumar, Kasun Premasiri, Min Gao +4
Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic m…
Dirac Nodal Line and Rashba Splitting Surface States in Nonsymmorphic ZrGeTe
Yun Yen, Cheng-Li Chiu, Ping-Hui Lin +4
Dirac semimetals (DSMs) are three dimensional analogue to graphene with symmety enforced bulk Dirac nodes. Among various DSMs, ZrSiS has been attracting more interests recently, du…
Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…
Fundamental insights to topological quantum materials: A real-space view of 13 cases by supersymmetry of valence bonds approach
F. C. Chou
We present a real-space view of one-dimensional (1D) to three-dimensional (3D) topological materials with 13 representative samples selected from each class, including 1D trans-pol…
High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes
Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…
Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3
G. J. Shu, S. C. Liou, S. K. Karna +3
Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelec…
Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe
Kasun Premasiri, Santosh Kumar Radha, Sukrit Sucharitakul +5
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in…
Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS
Sukrit Sucharitakul, Rajesh Kumar Ulaganathan, Raman Sankar +6
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their…
Graphene-like conjugated pi-bond system in Pb1-xSnxSe
G. J. Shu, S. C. Liou, S. Karna +4
Following the identification of the pi bond in graphene, in this work, a pi bond constructed through side-to-side overlap of half-filled 6pz orbitals was observed in a non-carbon c…
Intrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs
Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar +5
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, ho…
Connecting electron and phonon spectroscopy data to consistently determine quasiparticle-phonon coupling on the surface of topological insulators
Colin Howard, M. El-Batanouny
Photoemission and phonon spectroscopies have yielded widely varying estimates of the electron-phonon coupling constant λ on the surfaces of topological insulators, even for a parti…
Enhanced quasiparticle dynamics of quantum well states: the giant Rashba system BiTeI and topological insulators
V. Gnezdilov, P. Lemmens, D. Wulferding +5
In the giant Rashba semiconductor BiTeI electronic surface scattering with Lorentzian linewidth is observed that shows a strong dependence on surface termination and surface potent…