40 citations · 65 across the 6 of their papers we have counts for
8 papers
Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe Tunnel Field-Effect Transistors
Gaurav Pande, Jyun-Yan Siao, Wei-Liang Chen +7
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are…
Electron-Electron Interactions in 2D Semiconductor InSe
Arvind Shankar Kumar, Kasun Premasiri, Min Gao +4
Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic m…
Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…
Fundamental insights to topological quantum materials: A real-space view of 13 cases by supersymmetry of valence bonds approach
F. C. Chou
We present a real-space view of one-dimensional (1D) to three-dimensional (3D) topological materials with 13 representative samples selected from each class, including 1D trans-pol…
High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes
Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…
Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3
G. J. Shu, S. C. Liou, S. K. Karna +3
Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelec…