Mingkai Bai

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cond-mat.mtrl-sci2024

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure

Tao Hu, Xinpei Jia, Runhao Han +17

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al $_{2}$ O $_{3}$ /Hf$_{0.5…

cond-mat.mtrl-sci2024

Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Tao Hu, Xianzhou Shao, Mingkai Bai +13

We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS…

Effect of Top Al2​O3​ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2​O3​/Hf0.5​Zr0.5​O2​/SiOx​/Si (MIFIS) Gate Structure

Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure