Mingkai Bai

collaborators

3 papers

physics.app-ph2025

Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

Tao Hu, Zeqi Chen, Runhao Han +19

A Metal-Gate Blocking Layer (GBL)- Ferroelectric-Tunnel Dielectric Layer (TDL)-Ferroelectric -Channel Insulator (Ch.IL)-Si (MIFIFIS) structure is proposed to achieve a larger MW fo…

physics.app-ph2025

Unveiling Retention Loss Mechanism in FeFETs with Gate-side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization

Runhao Han, Tao Hu, Jia Yang +10

We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semicondu…

cond-mat.mtrl-sci2024

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure

Tao Hu, Xinpei Jia, Runhao Han +17

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al $_{2}$ O $_{3}$ /Hf$_{0.5…

Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

Unveiling Retention Loss Mechanism in FeFETs with Gate-side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization

Effect of Top Al2​O3​ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2​O3​/Hf0.5​Zr0.5​O2​/SiOx​/Si (MIFIS) Gate Structure

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure