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Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties
Yuki Wakabayashi, Shinobu Ohya, Yoshisuke Ban +1
We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant,…
Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping
Yoshisuke Ban, Yuki Wakabayashi, Ryota Akiyama +2
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecul…
Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe
Yuki Wakabayashi, Yoshisuke Ban, Shinobu Ohya +1
We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie tem…