49 citations · 111 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2015★ 40 cited
Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
D. Tomer, S. Rajput, L. J. Hudy +2
Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understoo…
cond-mat.mtrl-sci2015★ 49 cited
Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions
D. Tomer, S. Rajput, L. J. Hudy +2
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work…
cond-mat.mtrl-sci2009★ 22 cited
Electrical spin injection into Si(001) through a SiO2 tunnel barrier
C. H. Li, G. Kioseoglou, O. M. J. van t Erve +2
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dom…