activity
20152025
most citedWhy graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (33)-3C-SiC() reconstruction

18 citations · 26 across the 3 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025★ 8 cited

Roadmap on Advancements of the FHI-aims Software Package

Joseph W. Abbott, Carlos Mera Acosta, Alaa Akkoush +203

Electronic-structure theory is the foundation of the description of materials including multiscale modeling of their properties and functions. Obviously, without sufficient accurac…

cond-mat.mtrl-sci2019

The (33)-SiC-() Reconstruction: Atomic Structure of the Graphene Precursor Surface from a Large-Scale First-Principles Structure Search

Jan Kloppenburg, Lydia Nemec, Björn Lange +2

Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high quality epitaxial graphene. On the carbon face (the () or $(…

cond-mat.mes-hall2019

Formation of Graphene atop a Si adlayer on the C-face of SiC

Jun Li, Qingxiao Wang, Guowei He +6

The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…

physics.comp-ph2018

Benefits from using mixed precision computations in the ELPA-AEO and ESSEX-II eigensolver projects

Andreas Alvermann, Achim Basermann, Hans-Joachim Bungartz +30

We first briefly report on the status and recent achievements of the ELPA-AEO (Eigenvalue Solvers for Petaflop Applications - Algorithmic Extensions and Optimizations) and ESSEX II…

cond-mat.mtrl-sci2015★ 18 cited

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (33)-3C-SiC() reconstruction

Lydia Nemec, Florian Lazarevic, Patrick Rinke +2

We address the stability of the surface phases that occur on the C-side of 3C-SiC() at the onset of graphene formation. In this growth range, experimental…