L. Nemec

activity

20152019

most citedWhy graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3

\times

3)-3C-SiC(

1 ˉ 1 ˉ 1 ˉ

) reconstruction

18 citations · 18 across the 2 of their papers we have counts for

collaborators

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cond-mat.mtrl-sci2019

The (3 $\times$ 3)-SiC-( $1 ˉ 1 ˉ 1 ˉ$ ) Reconstruction: Atomic Structure of the Graphene Precursor Surface from a Large-Scale First-Principles Structure Search

Jan Kloppenburg, Lydia Nemec, Björn Lange +2

Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high quality epitaxial graphene. On the carbon face (the ( $1 ˉ 1 ˉ 1 ˉ$ ) or $(…

cond-mat.mtrl-sci2015★ 18 cited

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3 $\times$ 3)-3C-SiC( $1 ˉ 1 ˉ 1 ˉ$ ) reconstruction

Lydia Nemec, Florian Lazarevic, Patrick Rinke +2

We address the stability of the surface phases that occur on the C-side of 3C-SiC( $1 ˉ 1 ˉ 1 ˉ$ ) at the onset of graphene formation. In this growth range, experimental…

The (3×3)-SiC-(1ˉ1ˉ1ˉ) Reconstruction: Atomic Structure of the Graphene Precursor Surface from a Large-Scale First-Principles Structure Search

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3×3)-3C-SiC(1ˉ1ˉ1ˉ) reconstruction

The (3 $\times$ 3)-SiC-( $1 ˉ 1 ˉ 1 ˉ$ ) Reconstruction: Atomic Structure of the Graphene Precursor Surface from a Large-Scale First-Principles Structure Search

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3 $\times$ 3)-3C-SiC( $1 ˉ 1 ˉ 1 ˉ$ ) reconstruction