291 citations · 526 across the 4 of their papers we have counts for
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Newly observed first-order resonant Raman modes in few-layer MoS
Nils Scheuschner, Roland Gillen, Matthias Staiger +1
We report two new first-order Raman modes in the spectra of few-layer MoS at 286~cm and 471~cm for excitation energies above 2.4~eV. These modes appear only in fe…
Photoluminescence of freestanding single- and few-layer MoS2
Nils Scheuschner, Oliver Ochedowski, Anne-Marie Kaulitz +3
We present a photoluminescence study of freestanding and Si/SiO2 supported single- and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The…
Graphene on Si(111)7x7
O. Ochedowski, G. Begall, N. Scheuschner +3
We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The f…