76 citations · 124 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2005★ 45 cited
Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
K. Lai, W. Pan, D. C. Tsui +3
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure wi…
cond-mat.mes-hall2004★ 76 cited
The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
K. Lai, W. Pan, D. C. Tsui +3
Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterost…
cond-mat.mes-hall2003★ 3 cited
Spin Manipulation of Free 2-Dimensional Electrons in Si/SiGe Quantum Wells
A. M. Tyryshkin, S. A. Lyon, W. Jantsch +1
An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arb…