205 citations · 396 across the 9 of their papers we have counts for
6 papers · 1 filter
Polarizable Continuum Models and Green's Function Formalism: On the Dynamics of the Solvent Electrons
Ivan Duchemin, David Amblard, Xavier Blase
The many-body formalism, for the calculation of ionization potentials or electronic affinities, relies on the frequency-dependent dielectric function built from the electronic…
Robust analytic continuation approach to many-body GW calculations
Ivan Duchemin, Xavier Blase
The analytic continuation of the GW self-energy from the imaginary to the real energy axis is a central difficulty for approaches exploiting the favourable properties of response f…
Correlated electron-hole mechanism for molecular doping in organic semiconductors
Jing Li, Gabriele D'Avino, Anton Pershin +4
The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab in…
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
K. Guilloy, N. Pauc, A. Gassenq +15
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…
Uniaxially stressed germanium with fundamental direct band gap
R. Geiger, T. Zabel, E. Marin +17
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that…
Remote Surface Roughness Scattering in FDSOI devices with high-/SiO gate stacks
Y. M. Niquet, I. Duchemin, V. -H. Nguyen +2
We investigate remote surface scattering (RSR) by the SiO/HfO interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We s…