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cond-mat.mtrl-sci2020
Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Ryan Plumadore, Mehmet Baskurt, Justin Boddison-Chouinard +7
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complem…
cond-mat.mtrl-sci2015★ 48 cited
Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach
Thaneshwor P. Kaloni, Mohsen Modarresi, Muhammad Tahir +3
First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric f…