90 citations · 307 across the 12 of their papers we have counts for
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High fidelity TiN processing modes for multi-gate Ge-based quantum devices
Sinan Bugu, Sheshank Biradar, Alan Blake +5
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect tr…
4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +5
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two…
RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +3
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the…