A. Krajewska

activity

20152023

most citedResidual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

294 citations · 445 across the 10 of their papers we have counts for

collaborators

Showing 2018Show all

3 papers · 1 filter

cond-mat.mes-hall2018

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka +8

We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nano…

cond-mat.mes-hall2018

Surface-enhanced Raman scattering in graphene deposited on Al $_{x}$ Ga $_{1 - x}$ N/GaN axial heterostructure nanowires

Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski +11

The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not…

cond-mat.str-el2018

Almost pure $J_{eff} = 1/2$ Mott state of In $_{2}$ Ir $_{2}$ O $_{7}$ in the limit of reduced inter-site hopping

A. Krajewska, T. Takayama, R. Dinnebier +4

The pyrochlore iridate In $_{2}$ Ir $_{2}$ O $_{7}$ is a strong $J_{eff} = 1/2$ Mott insulator with frustrated magnetism. Despite the large trigonal crystal field, a small admixture…

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

Surface-enhanced Raman scattering in graphene deposited on Alx​Ga1−x​N/GaN axial heterostructure nanowires

Almost pure Jeff​=1/2 Mott state of In2​Ir2​O7​ in the limit of reduced inter-site hopping

Surface-enhanced Raman scattering in graphene deposited on Al $_{x}$ Ga $_{1 - x}$ N/GaN axial heterostructure nanowires

Almost pure $J_{eff} = 1/2$ Mott state of In $_{2}$ Ir $_{2}$ O $_{7}$ in the limit of reduced inter-site hopping