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20132019
most citedEffects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

150 citations · 211 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2015★ 37 cited

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Shinya Aikawa, Nobuhiko Mitoma, Takio Kizu +2

We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison…