150 citations · 211 across the 3 of their papers we have counts for
3 papers
Si-incorporated amorphous indium oxide thin-film transistors
Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the…
Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
Shinya Aikawa, Nobuhiko Mitoma, Takio Kizu +2
We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison…
Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi
Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change…